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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS10SM-10 HIGH-SPEED SWITCHING USE FS10SM-10 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q VDSS ................................................................................ 500V rDS (ON) (MAX) .............................................................. 0.90 ID .......................................................................................... 10A TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 500 30 10 30 125 -55 ~ +150 -55 ~ +150 4.8 Unit V V A A W C C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS10SM-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 500 30 -- -- 2 -- -- 3.3 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.70 3.5 5.5 1100 135 20 20 30 95 35 1.5 -- Max. -- -- 10 1 4 0.90 4.5 -- -- -- -- -- -- -- -- 2.0 1.0 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 200 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 7 5 tw=10s 100s 1ms 10ms TC = 25C Single Pulse DC 160 120 80 40 0 0 50 100 150 200 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD= 8V 125W DRAIN CURRENT ID (A) TC = 25C Pulse Test 6V 20 10 DRAIN CURRENT ID (A) 16 8 VGS=20V 10V 8V 6V 12 6 PD = 125W 8 4 5V 2 TC = 25C Pulse Test 4 5V 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10SM-10 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 TC = 25C Pulse Test 1.6 VGS = 10V 20V TC = 25C Pulse Test 32 24 ID = 15A 1.2 16 10A 8 5A 0 0 4 8 12 16 20 0.8 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 TC = 25C VDS = 50V Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test TC=25C 75C 150C DRAIN CURRENT ID (A) 16 12 3 2 100 7 5 3 2 10-1 -1 10 23 5 7 100 8 4 0 0 4 8 12 16 20 23 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103 7 5 3 2 102 7 5 3 2 Coss Ciss SWITCHING TIME (ns) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 10-1 23 5 7 100 23 Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 CAPACITANCE Ciss, Coss, Crss (pF) td(off) tf tr td(on) 5 7 101 Crss 101 Tch = 25C 7 f = 1MHz 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10SM-10 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 40 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VGS = 0V Pulse Test TC=125C 24 25C 75C 8 GATE-SOURCE VOLTAGE VGS (V) 16 VDS = 100V 200V 12 400V 8 SOURCE CURRENT IS (A) 80 100 Tch = 25C ID = 10A 32 16 4 0 0 20 40 60 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 5.0 VGS = 10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 0.05 0.02 0.01 D=1 0.5 0.2 0.1 PDM tw T D= tw T 1.0 0.8 0.6 0.4 -50 0 50 100 150 Single Pulse 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (C) |
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